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Aluminum Nitride (AlN)

Aluminum Nitride sputtering targetAluminum Nitride Sputtering Targets 

Purity--- 99%, 99.9%

Shape--- Discs, Plate,Step (Dia ≤480mm, Thickness ≥1mm)

Rectangle, Sheet, Step (Length ≤400mm, Width ≤200mm, Thickness ≥1mm)

Tube( Diameter< 300mm, Thickness >2mm )

Application -  surface acoustic wave sensors (SAWs), RF filter, film bulk acoustic resonator...

Aluminum Nitride Ceramic Substrate (AlN Ceramic)

Purity - 99.9%

Shape - Discs, Rectangle, Step, Plates, Sheets, Rods, Custom-Made

Dimension - Diameter (≤480mm), Length (≤400mm), Width (≤300mm), Thickness (≥1mm), Custom-Made

Application -

Aluminum Nitride Powder - AlN

Purity - 99.9%

Shape - powder

Dimension - size base on your needs

Application - raw material..

Aluminum Nitride Nanometer Powder

Purity---99% Oxygen content --- <0.8wt% Dissociative Si% 0.2

Color --- offwhite Crystallographic phase --- Hexagonal 

Average particle size (D50) --- <50nm

Specific surface area --- >78m2/g

Apparent density --- 0.12g/cm3

Manufacture method --- Plasma arc vapor 

Application --- Nano Aluminum nitride primary used in integrate circuit subtract, electronic devices, optical devices, thermal emission devices,crucibles used at high temperatures,preparation of composites of metal matrixes and polymer matrixes,expecially,in the high temperature seal binders and electronic encapsulation materials,Nano-ALN will be substantially applied in future.

Store --- It should be storing the cool and dry rooms without solar light. The product cannot be in big compression. In the use process of Nano-ALN powders, in order to avoid the powder aggregating caused by absorbing moistness and thus affecting application effects,the Nano-ALN powder can be not exposed in air.

Aluminum Nitride Preference

Aluminum Nitride - AlNAluminum nitride devices have high hardness, high modulus, very high dielectric properties, good oxidationresistant property and low-thermal expansion efficient, which is approximate to that of Silicon. When the AlN powers is used to make composites its interface compatibleness is good . It can improve mechanical properties, thermal conductance and dielectric properties of composites.

Aluminium nitride (AlN) is a nitride of aluminium. Its wurtzite phase (w-AlN) is a wide band gap (6.01-6.05 eV at room temperature) semiconductor material, giving it potential application for deep ultraviolet optoelectronics.
AlN was first synthesized in 1877, but it was not until the middle of the 1980s that its potential for application in microelectronics was realized due to its relatively high thermal conductivity for an electrically insulating ceramic (70–210 W·m−1·K−1 for polycrystalline material, and as high as 285 W·m−1·K−1 for single crystals).

Aluminum Nitride (AlN) is a unique ceramic material that combines high thermal conductivity with high electrical resistivity. Only a few ceramics possess high thermal conductivity: Beryllium Oxide (BeO) and cubic Boron Nitride (c-BN) are virtually the only other examples. However, the use of BeO is restricted due to its toxicity, and c-BN is very difficult to produce.
"Thermal conductivity" is the ability of a material to transport heat when subjected to a temperature gradient. In dielectrics like AlN, heat is transferred through lattice vibrations (also known as "phonons"). Materials with simple structure, covalent bonding and low atomic mass generally possess high thermal conductivity.
The actual thermal conductivity of a material is affected by factors that hinder phonon propagation. Temperature, impurities, pore size and distribution, grain size, compositional homogeneity and orientation all affect the lattice vibrations, and therefore thermal conductivity.
The theoretical thermal conductivity of AlN is about 280 Wm-1K-1. The actual thermal conductivity depends on processing conditions and raw material purity. The presence of oxygen impurities in the lattice is a major detriment; as oxygen displaces nitrogen in the lattice it creaes vacancies that interrupt phonon propagation and scatter the phonons, thus reducing thermal conductivity.

Stability and chemical properties
Aluminium nitride is stable at high temperatures in inert atmospheres and melts at 2800 °C. In a vacuum, AlN decomposes at ~1800 °C. In the air, surface oxidation occurs above 700 °C, and even at room temperature, surface oxide layers of 5-10 nm have been detected. This oxide layer protects the material up to 1370 °C. Above this temperature bulk oxidation occurs. Aluminium nitride is stable in hydrogen and carbon dioxide atmospheres up to 980 °C.

The material dissolves slowly in mineral acids through grain boundary attack, and in strong alkalies through attack on the aluminium nitride grains. The material hydrolyzes slowly in water. Aluminium nitride is resistant to attack from most molten salts, including chlorides and cryolite.

Manufacture
AlN is synthesized by the carbothermal reduction of aluminium oxide in the presence of gaseous nitrogen or ammonia or by direct nitridation of aluminium. The use of sintering aids, such as Y2O3 or CaO, and hot pressing is required to produce a dense technical grade material.

Applications
Epitaxially grown thin film crystalline aluminium nitride is used for surface acoustic wave sensors (SAWs) deposited on silicon wafers because of AlN's piezoelectric properties. One application is an RF filter which is widely used in mobile phones,which is called a thin film bulk acoustic resonator (FBAR). This is a MEMS device that uses aluminium nitride sandwiched between two metal layers.

Aluminium nitride is also used to build piezoelectric micromachined ultrasound transducers, which emit and receive ultrasound and which can be used for in-air rangefinding over distances of up to a meter.

Metallization methods are available to allow AlN to be used in electronics applications similar to those of alumina and beryllium oxide. AlN nanotubes as inorganic quasi-one-dimensional nanotubes, which are isoelectronic with carbon nanotubes, have been suggested as chemical sensors for toxic gases.

Currently there is much research into developing light-emitting diodes to operate in the ultraviolet using gallium nitride based semiconductors and, using the alloy aluminium gallium nitride, wavelengths as short as 250 nm have been achieved. In May 2006, an inefficient AlN LED emission at 210 nm was reported.

There are also multiple research efforts in industry and academia to use aluminum nitride in piezoelectric MEMS applications. These include resonators, gyroscopes and microphones.

Among the applications of AlN are opto-electronics, dielectric layers in optical storage media, electronic substrates, chip carriers where high thermal conductivity is essential, military applications, as a crucible to grow crystals of gallium arsenide, steel and semiconductor manufacturing.

Base Information

Names: Aluminium nitride

Chemical formula:AlN
CAS Number:24304-00-5
ChEBI CHEBI:50884
ChemSpider:81668
EC Number:246-140-8
PubChem:90455
RTECS number:BD1055000
Molar mass:40.9882 g/mol
Appearance:white to pale-yellow solid
Density:3.260 g/cm3
Melting point:2,200 °C (3,990 °F; 2,470 K)
Boiling point:2,517 °C (4,563 °F; 2,790 K)

Solubility in water:reacts (powder), insoluble (monocrystalline)
Solubility:reacts in ethanol
Band gap:6.015 eV (direct)
Electron mobility ~300 cm2/(V·s)
Thermal conductivity:285 W/(m·K)

Refractive index (nD):1.9–2.2
Crystal structure:Wurtzite
Space group:C6v4-P63mc
Coordination geometry:Tetrahedral
Specific heat capacity (C):30.1 J/mol K
Std molar entropy (So298):20.2 J/mol K

Std enthalpy of formation (ΔfHo298):318 kJ/mol
Gibbs free energy (ΔfG˚):287.4 kJ/mol

Relation Products:

Aluminum Nitride (AlN) Sputtering Targets;

Boron Nitride (BN) Sputtering Targets;

Chrominium Nitride (CrN) Sputtering Targets;

Gallium Nitride (GaN) Sputtering Targets;

Germanium Nitride (Ge3N4) Sputtering targets;

Hafnium Nitride (HfN) Sputtering Targets;

Magnesium Nitride (Mg2N3) Sputtering Targets;

Niobium Niride (NbN) Sputtering Targets;

Silicom Nitride (Si3N4) Sputtering Targets;

Tantalum Nitride (TaN) Sputtering Targets;

Titanium Carbonitride (TiCN);

Titanium Nitride(TiN) Sputtering Targets;

Vanadium Nitride (VN) Sputtering Targets;

Zirconium Nitride (ZrN) Sputtering Targets;

 

 

 

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