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Your current location :Home > Boron Carbide (B4C)

Boron Carbide (B4C)

Boron carbide ( B4C) is an extremely hard ceramic material used in tank armor, bulletproof vests, and numerous industrial applications. With a hardness of 9.3 on the mohs scale, it is one of the hardest materials known, behind cubic boron nitride and diamond.

Boron carbide was discovered in the 19th century as a by-product of reactions involving metal borides, however, its chemical formula was unknown. It was not until the 1930s that the formula was determined to be B4C.Boron carbide is now produced industrially by the carbothermal reduction of B2O3 (boron oxide) in an electric arc furnace.

Its ability to absorb neutrons without forming long lived radionuclides makes the material attractive as an absorbent for neutron radiation arising in nuclear power plants. Nuclear applications of boron carbide include shielding, control rod and shut down pellets. Within control rods, boron carbide is often powdered, to increase its surface area.

Basic Information

Molar mass: 55.255 g/mol
Crystal structure:
Rhombohedral

Boiling Point: >3500 oC , 3773K, 6332°F            

Melting Point: 2350 oC, 2623K, 4262°F

Specific Gravity: 2.52 g/cc, solid.                

Solubility in H2O:Insoluble

Appearance: dark gray or black powder, odorless

Acidity (pKa): 6-7 (20°C)

 

B4C Sputtering targetsBoron Carbide Sputtering targets - B4C

Purity--- 99.5%     

Shape--- Discs, Plate, Step ( Dia ≤480mm, Thickness ≥ 1mm)

                Rectangle, Sheet,  Step ( Length≤410mm,Width ≤300mm, Thickness ≥1mm)

                Tube( Diameter< 300mm,  Thickness >2mm, )

Application --- B4C in general are used for wear-resistant films and semi-conducting films.B4C are used as diffusion barriers in both silicon and III-V device technology in multilevel metallization schemes involving aluminum as a second level.

Boron Carbide Evaporation Material - B4C

Purity--- 99.5% 

Granule --- 1-6mm, 3-6mm, 1-10mm

Application --- B4C in general are used for wear-resistant films and semi-conducting films.

B4C are used as diffusion barriers in both silicon and III-V device technology in multilevel metallization schemes involving aluminum as a second level.

Boron Carbide Powder - B4C

Purity--- 99.5%

Shape--- Powder

Boron Carbide Products - B4C

Being the second-hardest material to diamonds, it is used as a wear resistant material. Because of its light weight, an application to movable components of precision machines is also under consideration.

- Sand blast nozzles
- Various impinging plates
- Wear resistant members
- Nuclear power-related uses

Relation Products:

Boron sputtering targets - B;

Boron carbide sputtering target - B4C;

Boron Nitride sputtering target - BN;

Aluminium Diboride Sputtering target - AlB2;

Cerium Hexaboride sputtering targets - CeB6;

Chrominium Boride sputtering targets - CrB;

Cobalt Boride sputtering target - CoB;

Hafnium Diboride (HfB2) Sputtering Target - HfB2;

Iron Boride sputtering targets - FeB;

Lathanum Hexaboride sputtering targets - LaB6;

Magnesium Diboride sputtering targets - MgB2;

Molybdenum Diboride sputtering targets - MoB2;

Neodymium Boride (NdB) Sputtering Target;

Nickel Boride sputtering targets -Ni2B;

Tantalum Diboride Sputterng target - TaB2;

Titanium Aluminum Boron Sputtering Targets - TiAlB;

Titanium Diboride sputtering targets - TiB2;

Tungsten Diboride Sputtering tarets - WB2;

Vanadium Boride (VB2) Sputtering Target - VB / VB2;

Zirconium Diboride Sputtering targets - ZrB2;

Boron Carbide(B4C) Sputtering Targets;

Chromium Carbide (Cr3C2) Sputtering Targets;

Hafnium Carbide(HfC) Sputtering Targets;

Iron Carbide (Fe3C) Sputtering Targets;

Molybdenum Carbide (Mo2C) Sputtering Targets;

Niobium Nitride (NbC) Sputtering Targets;

Silicom Carbide (SiC) Sputtering Targets;

Tantalum Carbide (TaC) Sputtering Targets;

Titanium Carbide(TiC) Sputtering Targets;

Titanium Carbonitride (TiCN) Sputtering Targets;

Tungsten Carbide (W2C) Sputtering Targets;

Tungsten Carbide (WC) Sputtering Targets;

Tungsten Carbide Doped with Nickel (WC+Ni);

Tungsten Carbide Doped with Cobalt (WC+Co);

Vanadium Carbide (VC) Sputtering Targets;

Zirconium Carbide(ZrC) Sputtering Targets;

 

 

 

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