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Your current location :Home > Gallium Nitride (GaN)

Gallium Nitride ( GaN) 

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.

Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies.

GaN is a very hard (12±2 GPa:4), mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form it resists cracking and can be deposited in thin film on sapphire or silicon carbide, despite the mismatch in their lattice constants.GaN can be doped with silicon (Si) or with oxygen to n-type and with magnesium (Mg) to p-type;however, the Si and Mg atoms change the way the GaN crystals grow, introducing tensile stresses and making them brittle. Gallium nitride compounds also tend to have a high dislocation density, on the order of a hundred million to ten billion defects per square centimeter.

Basic Information

IUPAC name:Gallium nitride

CAS Number:25617-97-4

ChemSpider:105057
ECHA InfoCard 100.042.830

PubChem CID:117559
RTECS number:LW9640000

Chemical formula:GaN
Molar mass:83.73 g/mol
Appearance:yellow powder
Density:6.15 g/cm3

Melting point: >2500 °C
Solubility in water:Insoluble
Band gap:3.4 eV (300 K, direct)
Electron mobility:440 cm2/(V·s) (300 K)
Thermal conductivity:1.3 W/(cm·K) (300 K) [3]
Refractive index (nD):2.429
Structure
Crystal structure:Wurtzite
Space group:C6v4-P63mc
Lattice constant:a = 3.186 Å, c = 5.186 Å [4]

Gallium Nitride (GaN) Sputtering Target

Purity--- 99.999% Diameter---2"、3"、4"、6"

Shape---Discs: Dia(≤465mm),Thickness(≥0.5mm)
Rectangle: Length(≤250mm),Width(≤250mm),Thickness(≥1mm)

Application --- Semiconductors.

Gallium Nitride (GaN) Granule

Purity--- 99.99%,99.999%
Size --- 1-6mm

Application ---

Gallium Nitride (GaN) Powder

Purity--- 99.99%,99.999%
Size --- 325mesh

Application ---

Relation Products:

Aluminum Nitride (AlN) Sputtering Targets;

Boron Nitride (BN) Sputtering Targets;

Chrominium Nitride (CrN) Sputtering Targets;

Gallium Nitride (GaN) Sputtering Targets;

Germanium Nitride (Ge3N4) Sputtering targets;

Hafnium Nitride (HfN) Sputtering Targets;

Magnesium Nitride (Mg2N3) Sputtering Targets;

Niobium Niride (NbN) Sputtering Targets;

Silicom Nitride (Si3N4) Sputtering Targets;

Tantalum Nitride (TaN) Sputtering Targets;

Titanium Carbonitride (TiCN);

Titanium Nitride(TiN) Sputtering Targets;

Vanadium Nitride (VN) Sputtering Targets;

Zirconium Nitride (ZrN) Sputtering Targets;

 

 

 

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