|
Gallium Arsenide (GaAs) |
||
|
Another important application of GaAs is for high efficiency solar cells. In 1970, the first GaAs heterostructure solar cells were created by Zhores Alferov and his team in the USSR.In the early 1980s, the efficiency of the best GaAs solar cells surpassed that of silicon solar cells, and in the 1990s GaAs solar cells took over from silicon as the cell type most commonly used for Photovoltaic arrays for satellite applications. Later, dual- and triple-junction solar cells based on GaAs with germanium and indium gallium phosphide layers were developed as the basis of a triple junction solar cell which held a record efficiency of over 32% and can operate also with light as concentrated as 2,000 suns. This kind of solar cell powers the rovers Spirit and Opportunity, which are exploring Mars' surface. Also many solar cars utilize GaAs in solar arrays.Complex designs of AlxGa1-xAs-GaAs devices can be sensitive to infrared radiation. GaAs diodes can be used for the detection of x-rays. GaAs has been used to produce (near-infrared) laser diodes since the early 1960s. GaAs is often used a substrate material for the epitaxial growth of other III-V semiconductors including: InGaAs and GaInNAs. The toxicological properties of gallium arsenide have not been thoroughly investigated. On one hand, due to its arsenic content, it is considered highly toxic and carcinogenic. On the other hand, the crystal is stable enough that ingested pieces may be passed with negligible absorption by the body. When ground into very fine particles, such as in wafer-polishing processes, the high surface area enables more reaction with water releasing some arsine and/or dissolved arsenic. The environment, health and safety aspects of gallium arsenide sources (such as trimethylgallium and arsine) and industrial hygiene monitoring studies of metalorganic precursors have been reported recently in a review.Basic Information
|
||
|
Gallium
Arsenide Sputtering Target
(GaAs target)
Diameter---2"、 3"、4" 、6"...... Shape---Crystal, Disks, Sheets, Plate, custom-made |
||
|
Semi-insulating GaAs Evaporation Material Melting---1600oC Density---5.37g/CM3Transmission Range (um)---1.0-22 Temperature Coefficient of Refractive Index---149 x 10-6 /oC |
||
|
Semi-insulating GaAs Wafers Diameter---2"、3"、4"、6"...... Dopant---non-dopant、Cr Orient.---<100>、<111> Surface---sliced and polished wafers are availble on request Application---Ultraspeed Circuit, Gate Array Microwave Device,Single crystals of gallium arsenide can be manufactured by the Bridgeman technique, as the Czochralski process is difficult for this material due to its mechanical properties. However, an encapsulated Czochralski method is used to produce ultra-high purity GaAs for semi-insulators. |
||
|
Low-resistivity GaAs Wafers Diameter---2"、3" Dopant---Si、Cr Orient. ---<100>、<111> Surface --- sliced and polished wafers are availble on request Application---LED, Laser |
Gallium arsenide (GaAs) is an important semiconductor and is used to make devices such as microwave frequency integrated circuits (ie, MMICs), infrared light-emitting diodes, laser diodes and solar cells.GaAs materials is a new-generation semiconductor materials after Ge and
Si. It has the characteristics of high mobility, brand bandgap and has
the advantage in the fields of working speed, frequency and
photoelectricity characteristic which the Si can not match. GaAs is the
most important and mature compound semiconductor materials, its major
applications are the fields of elctronics and microelectronics.
E-mail: sales@china-raremetal.com
Tel: (86)0791-88101311 
Mobile: (86)13317053312
Wechat ID: 13317053312
QQ ID:752340693
Skype ID: minnashu
