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Germanium Nitride (Ge3N4) | |
Germanium(IV) nitride is an inorganic compound with the chemical formula Ge3N4. It can be produced through the reaction of germanium and ammonia: 3Ge + 4NH3 → Ge3N4 + 6H2 |
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IUPAC name:Germanium(IV) nitride Identifiers CAS Number:12065-36-0 ChemSpider:17617086 ECHA InfoCard: 100.031.864 PubChem CID:16684757 |
Chemical formula:Ge3N4 Molar mass:273.947 g/mol Appearance:light brown powder Density:5.25 g/cm3 Boiling point: 900 °C (1,650 °F; 1,170 K) (decomposes) |
Germanium Nitride Sputtering Target ( Ge3N4 Target ) Purity--- 99.99% Shape--- Discs, Plate,Step (Dia ≤465mm, Thickness ≥0.8mm) Rectangle, Sheet, Step (Length ≤400mm, Width ≤305mm, Thickness ≥0.8mm) Tube( Diameter< 305mm, Thickness >4mm, Silicon rotary target ) Application---High index film in infrared filters, IR.Coating |
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Germanium Nitride Evaporation Material - Ge3N4 Purity--- 99.99% Application --- |
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Germanium nitride Powder - Ge3N4 Purity---99.99% Shape--- powder Size --- 100mesh |
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Relation Products: Aluminum Nitride (AlN) Sputtering Targets; Boron Nitride (BN) Sputtering Targets; Chrominium Nitride (CrN) Sputtering Targets; Gallium Nitride (GaN) Sputtering Targets; Germanium Nitride (Ge3N4) Sputtering targets; Hafnium Nitride (HfN) Sputtering Targets; Magnesium Nitride (Mg2N3) Sputtering Targets; Niobium Niride (NbN) Sputtering Targets; Silicom Nitride (Si3N4) Sputtering Targets; Tantalum Nitride (TaN) Sputtering Targets; Titanium Nitride(TiN) Sputtering Targets; |