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Your current location :Home > Germanium nitride - Ge3N4
Germanium Nitride (Ge3N4)

Germanium(IV) nitride is an inorganic compound with the chemical formula Ge3N4. It can be produced through the reaction of germanium and ammonia:

3Ge + 4NH3 → Ge3N4 + 6H2
Basic Information

IUPAC name:Germanium(IV) nitride
CAS Number:12065-36-0
ECHA InfoCard: 100.031.864
PubChem CID:16684757
Chemical formula:Ge3N4
Molar mass:273.947 g/mol
Appearance:light brown powder
Density:5.25 g/cm3
Boiling point: 900 °C (1,650 °F; 1,170 K) (decomposes)

Germanium Nitride Sputtering Target ( Ge3N4 Target )

Purity--- 99.99%      

Shape--- Discs, Plate,Step (Dia ≤465mm,  Thickness ≥0.8mm)

                Rectangle, Sheet, Step (Length ≤400mm, Width ≤305mm, Thickness ≥0.8mm)

                Tube( Diameter< 305mm,  Thickness >4mm, Silicon rotary target )

Application---High index film in infrared filters, IR.Coating

Germanium Nitride Evaporation Material  - Ge3N4

Purity--- 99.99%
Shape--- Irregular piece(1-5mm) , cylinder, pellet, taper

Application  --- 

Germanium nitride Powder - Ge3N4


Shape--- powder

Size --- 100mesh

Relation Products:

Aluminum Nitride (AlN) Sputtering Targets;

Boron Nitride (BN) Sputtering Targets;

Chrominium Nitride (CrN) Sputtering Targets;

Gallium Nitride (GaN) Sputtering Targets;

Germanium Nitride (Ge3N4) Sputtering targets;

Hafnium Nitride (HfN) Sputtering Targets;

Magnesium Nitride (Mg2N3) Sputtering Targets;

Niobium Niride (NbN) Sputtering Targets;

Silicom Nitride (Si3N4) Sputtering Targets;

Tantalum Nitride (TaN) Sputtering Targets;

Titanium Carbonitride (TiCN);

Titanium Nitride(TiN) Sputtering Targets;

Vanadium Nitride (VN) Sputtering Targets;

Zirconium Nitride (ZrN) Sputtering Targets;




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