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Indium Arsenide (InAs)

Indium arsenide granuleIndium arsenide is manufactury by zone melting both high purity indium and aresenide. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1-3.8 μm.



Base information:

  • Color: dark grey silvery
  • Odor: not known
  • Melting point/Melting range: 527 °C
  • Boiling point/Boiling range: Not determined
  • Sublimation temperature / start: Not determined
  • Flash point: Not applicable
  • Ignition temperature: Not applicable
  • Decomposition temperature: 500°C
  • Danger of explosion: .
  • Explosion limits:
  • Vapor pressure:
  • Density: 5.8g/cm3 at 25 °C
  • CAS NUMBER: [1312-41-0]

Indium Arsenide (InAs) Sputtering target

Shape---Disk(2 inch, 3 inch),Sheet

Indium Arsenide (InAs) Granular/Irregular Piece

Shape---Irregular Piece,granular (2-10mm)

Indium Arsenide (InAs) Wafer

Size --- Dia50mm/76mm, thickness 450um
Surface --- One side polished, two side polished, orientation(100) thickness:450+/-25μm.
Application --- Infrared detectors, infrared LEDs and lasers and transistors.

Main Parameter of Indium phosphide single crystal wafer: (any other speciafication, need by custom-made)


Varieties Diameter(mm) Type Consistency(cm-3) Mobility(cm2/V.s) Resistivity(Ω.cm) Dislocation density(cm-2)
InAs 50/76 N <3X1016 >20000 - <3X104
Sn-InAs 50/76 N (5-20)X1017 >2000 - <1X104
S-InAs 50/76 N (3-80)X1017 >2000 - <1X104
Zn-InAs 50/76 P (3-80)X1017 60-300 - <1X104
Mn-InAs 50/76 P (5-60)X1017 60-300 - <1X104




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