sales@china-raremetal.com
Product show

 

Contact Us

Business talking:
E-mail:
sales@china-raremetal.com

Tel: (86)0791-88101311
Mobile: (86)13317053312
wechat idWechat ID: 13317053312
QQ ID:752340693
Skype ID: minnashu
Your current location :Home > Indium Phosphide InP

Indium Phosphide (InP)

Indium phosphide sputtering target

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

Indium phosphide is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.It also be used in optoelectronics devices like laser diodes just for a direct bandgap. It can be useed in optical-electronic field and microwave field,and recentlys,it widly used solar cell technique. Also it can be used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.


Basic Information

  • Color: Black cubic crystals
  • Molar mass: 145.792 g/mol
  • Odor: no odor
  • Melting point/Melting range:1062°C (1335.15 K)
  • Boiling point/Boiling range:Not determined
  • Flash point:Not applicable
  • Ignition temperature:Not applicable
  • Decomposition temperature: Not determined
  • Danger of explosion: .
  • Explosion limits: Not applicable
  • Vapor pressure:
  • Density: 4.81 g/cm3, solid
  • Solubility in / Miscibility with Water: Insoluble
  • CAS NUMBER: [22398-80-7]

Indium Phosphide (InP) sputtering target

Diameter---2", 3", 4" Purity --- 99.999%

Shape --- Rod, Disk, Sheet
Other special requirements can be satisfied.

 

Indium Phosphide (InP) evaporation material

Purity --- 99.999% Dimension --- 2-10mm, custom-made

Shape --- ingot, lumps(2-10mm)
Other special requirements can be satisfied.

 

Indium Phosphide (InP) Wafer (Single Crystal /mul-crystal)

Diameter --- 2", 3" Purity --- 99.999%

Surface --- One side polished, two side polished, orientation(100)(111) thickness:350+/-25µm or 625µm.

Application --- substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Below show some common product, other special requirements can be satisfied. All wafer can be used as you got it, orientation(100)(111).

Main Parameter of Indium phosphide single crystal wafer:

 

Varieties Diameter(mm) Type Consistency(cm-3) Mobility(cm2/V.s) Resistivity(Ω.cm) Dislocation density(cm-2)
InP 50 N (0.8-2)X1016 (3.5-4)X103 - (5-6)X104
S-InP 50 N (0.8-3)X1018
(4-8)X1018
(2.0-2.4)X103
(1.0-1.6)X103
- 3X104
<5X102(60%Area)
S-InP 76 N (0.8-3)X1018
(4-6)X1018
(2.0-2.4)X103
(1.0-1.6)X103
- 5X104
<1X103(60%Area)
Zn-InP 50 P (0.6-2)X1018
(3-6)X1018
70-90
50-70
- 5X104
<5X102(60%Area)
Fe-InP 50 N 107-108 >=2000 107-108 <3X104
Fe-InP 76 N 107-108 >=2000 107-108 <6X104
Mul-Crystal 50-76 N (0.6-5)X1016 - - -

 

 

 

CopyRight ©2010 China Rare Metal Material Co., Ltd. All rights reservedchina rare metal material co.,ltd