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Your current location :Home > Silicon Nitride (Si3N4)

Silicon Nitride (Si3N4)

Silicon nitride is a chemical compound of the elements silicon and nitrogen, with the formula Si3N4. It is a white, high-melting-point solid that is relatively chemically inert, being attacked by dilute HF and hot H2SO4. It is very hard (8.5 on the mohs scale). It is the most thermodynamically stable of the silicon nitrides. Hence, Si3N4 is the most commercially important of the silicon nitrides and is generally understood as what is being referred to where the term "silicon nitride" is used.
In general, the main issue with applications of silicon nitride has not been technical performance, but cost. As the cost has come down, the number of production applications is accelerating.

Si3N4-trigonal-α Si3N4-hexagonal-β Si3N4-cubic-γ
Base information

Preferred name:Silicon nitride
Other names: Nierite
CAS Number:12033-89-5
ECHA InfoCard:100.031.620
EC Number:234-796-8
PubChem CID:3084099
Chemical formula:Si3N4
Molar mass:140.28 g·mol−1

Appearance:grey, odorless powder

Density:3.2 g/cm3, solid
Melting point:1,900 °C; 3,452 °F; 2,173 K (decomposes)
Solubility in water:Insoluble
Refractive index (nD):2.016

Main hazards:When heated to decomposition, silicon nitride may emit toxic fumes of ammonia and ozone. Contact with acids may generate flammable hydrogen gas.

Silicon Nitride Sputtering Target (Si3N4 Target)

Purity --- >99%, >99.9%

Shape --- Discs, Plate, Step (Dia ≤300mm,, Thickness ≥2mm)

Rectangle, Sheet, Step (Length ≤300mm, Width ≤300mm, Thickness ≥2mm) 

Silicon Nitride Nanometer Powder (Amorphous Si3N4) 

Purity---99.0% Oxygen content --- <0.62wt% Dissociative Si (%)---< 0.3%

Color --- white Crystal Phase --- Amorphous 

Average particle size (D50) --- <20nm

Specific surface area --- >115m2/g

Loose loading density --- 0.05g/cm3 

Manufacture method --- Plasma arc vapor 

Silicon Nitride Nanometer Powder ( Alpha Si3N4 ) 

Purity---99.1% Oxygen content --- <0.9wt% 

Color --- shallow brown Crystal Phase --- Hexagonal 

Average particle size (D50) --- <100-800nm

Specific surface area --- >45m2/g

Loose loading density --- 0.44g/cm3 

Manufacture method --- Plasma arc vapor 

Application --- This product has high purity, small and uniform particle diameters, large specific surface area, high surface activity, and low loose loading density. When Nano-Si3N4 is made to be structure devices, the devices will have low ceramic formation temperature of ceramic, good size stability, high mechanical strength, high chemical anticorrosion, especially, the devices possess high strength, at high temperature and the self greasing effect, when this powder is used as the dispersion phase in composites, these dispersion phases increase substantially complex properties of composites.

Relation Products:

Aluminum Nitride (AlN) Sputtering Targets;

Boron Nitride (BN) Sputtering Targets;

Chrominium Nitride (CrN) Sputtering Targets;

Gallium Nitride (GaN) Sputtering Targets;

Germanium Nitride (Ge3N4) Sputtering targets;

Hafnium Nitride (HfN) Sputtering Targets;

Magnesium Nitride (Mg2N3) Sputtering Targets;

Niobium Niride (NbN) Sputtering Targets;

Silicom Nitride (Si3N4) Sputtering Targets;

Tantalum Nitride (TaN) Sputtering Targets;

Titanium Carbonitride (TiCN);

Titanium Nitride(TiN) Sputtering Targets;

Vanadium Nitride (VN) Sputtering Targets;

Zirconium Nitride (ZrN) Sputtering Targets;




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