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Your current location :Home > Vanadium Nitride (VN) Alloy

Vanadium Nitride - VN

Vanadium nitride, VN, is a chemical compound of vanadium and nitrogen.

Vanadium nitride is formed during the nitriding of steel and increases wear resistance. Another phase, V2N, also referred to as vanadium nitride, can be formed along with VN during nitriding. VN has a cubic, rock-salt structure. There is also a low-temperature form, which contains V4 clusters. The low-temperature phase results from a dynamic instability, when the energy of vibrational modes in the high-temperature NaCl-structure phase, are reduced below zero.

It is a strong-coupled superconductor. Nanocrystalline vanadium nitride has been claimed to have potential for use in supercapacitors.

Base information

IUPAC name:Vanadium nitride
Other names:Vanadium(III) nitride
CAS Number:24646-85-3
ECHA InfoCard:100.042.151
PubChem CID:90570
Chemical formula:VN
Molar mass:64.9482 g/mol
Appearance:black powder
Density:6.13 g/cm3
Melting point: 2,050 °C (3,720 °F; 2,320 K)
Structure
Crystal structure:cubic, cF8
Space group:Fm3m, No. 225

Vanadium Carbide Sputtering Target - VC Target

Purity--- 99.9%

Shape---Discs, Plate, Step (Dia ≤480mm, Thickness ≥1mm)

Rectangle, Sheet, Step (Length ≤420mm, Width ≤270mm, Thickness ≥1mm)

Tube( Diameter< 300mm, Thickness >2mm ) 

Prod. Method: Vacuum Hot Press

Application -

Vanadium Carbide Evaporation Material - VC Granule

Purity - 99.9%

Granule - 3-6mm, 1-6mm

Application - Coating for thin film

Vanadium Carbide Powder - VC

Purity--- 99.9%

Granularity --- 100mesh、200 mesh、325mesh

Relation Products:

Boron sputtering targets - B;

Boron carbide sputtering target - B4C;

Boron Nitride sputtering target - BN;

Aluminium Diboride Sputtering target - AlB2;

Cerium Hexaboride sputtering targets - CeB6;

Chrominium Boride sputtering targets - CrB;

Cobalt Boride sputtering target - CoB;

Hafnium Diboride (HfB2) Sputtering Target - HfB2;

Iron Boride sputtering targets - FeB;

Lathanum Hexaboride sputtering targets - LaB6;

Magnesium Diboride sputtering targets - MgB2;

Molybdenum Diboride sputtering targets - MoB2;

Neodymium Boride (NdB) Sputtering Target;

Nickel Boride sputtering targets -Ni2B;

Niobium Diboride (NbB2) Sputtering target - NbB2;

Tantalum Diboride Sputterng target - TaB2;

Titanium Aluminum Boron Sputtering Targets - TiAlB;

Titanium Diboride sputtering targets - TiB2;

Tungsten Diboride Sputtering tarets - WB2;

Vanadium Boride (VB2) Sputtering Target - VB / VB2;

Zirconium Diboride Sputtering targets - ZrB2;

Aluminum Nitride (AlN) Sputtering Targets;

Boron Nitride (BN) Sputtering Targets;

Chrominium Nitride (CrN) Sputtering Targets;

Gallium Nitride (GaN) Sputtering Targets;

Germanium Nitride (Ge3N4) Sputtering targets;

Hafnium Nitride (HfN) Sputtering Targets;

Magnesium Nitride (Mg2N3) Sputtering Targets;

Niobium Niride (NbN) Sputtering Targets;

Silicom Nitride (Si3N4) Sputtering Targets;

Tantalum Nitride (TaN) Sputtering Targets;

Titanium Carbonitride (TiCN);

Titanium Nitride(TiN) Sputtering Targets;

Vanadium Nitride (VN) Sputtering Targets;

Zirconium Nitride (ZrN) Sputtering Targets;

 

 

 

 

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