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Substrate

Wellcome to here select many kinds substrates. CRM offer a serous of substrates to thin film research and thin film application. CRM supplied not only products but also more servings! Any inquiry, please send us email or fax. All inquiry will be reply in 24 hours. Of course your callings are wellcome.

High-temperature superconductor thin-film substrates
Crystal

Crystal Structure

Melting point (??) Density
(g/cm3)
Expansion coefficient (X10-6/K) Permittivity Growth Tech. Size Max. Standard epitaxial substrate ( polish one side or two side)

LaAlO3

Oblique Hexahedral (about cubic )
a=3.821A

2100 6.52 9.2 24.5

CZ

 

??3" ??3"X0.5mm
??2"X0.5mm
10X10X0.5mm
LSAT Cubic
a=3.868A
1840 6.74 10 22

CZ

??2" ??2"X0.5mm
10X10X0.5mm
SrTiO3 Cubic a=3.90A 2050 5.175 10.4 300 flame fusion ??30mm 10X10X 0.5mm
10X5X 0.5mm
MgO Cubic
a=4.216A
2852 3.58 12.8 9.8 arc melting 50X 50X20 ??2"X0.5mm
10X10X 0.5mm
YSZ Cubic
c=5.125A
2500 5.8 10.3 27 Flux Technique ??2" ??2"X0.5mm
10X10X 0.5mm
NdGaO3 Orthogonal
a=5.43A
b=5.5A
c=7.71A
1600 7.57 7.8 25

CZ

??2" ??2"X0.5mm
10X10X 0.5mm

La:SrAlO3

Quartet
a=3.756A
c=12.63A
1650 5.92 <100> 10.05
<001> 18.9
16.8

CZ

??20mm 10X10X 0.5mm
YAlO3 Orthogonal
a=5.3286A
b=7.3706A
c=5.1796A
1870 5.37 4.2 //a
11.7 //b
5.1//c
/

CZ

??2" 10X10X 0.5mm
Magnetic and ferroelectric thin film substrates
Crystal Crystal Structure Melting Point (??) Density (g/cm3) Mohs hardness Expansion coefficient (X10-6/K) Permi-ttivity Growth Tech. Size Max. Standard epitaxial substrate ( polish one side or two side)

LaAlO3

Rhombo- hedral (about Cubic)
a=3.821A

2100 6.52 6.5 9.2 24.5

CZ

??3" ??3"X0.5mm
??2"X0.5mm
??1"X0.5mm
10X10X0.5mm
LSAT Cubic
a=3.868A
1840 6.74 6.5 10 22

CZ

??2" ??2"X0.5mm
10X10X0.5mm
SrTiO3 Cubic
a=3.90A
2050 5.175 6 10.4 300 flame fusion ??30mm 10X10X0.5mm
10X5X0.5mm
Nb:SrTiO3 Cubic
a=3.90A
2050 5.175 6 / / flame fusion ??25mm 10X10X0.5mm
10X5X0.5mm
Al2O3 Hexagonal
a=4.758A
c=12.99A
2040 3.97 9 7.50 /

CZ

??180mm ??2"X0.33mm
??100X0.33mm
10X10X0.5mm
MgAl2O4 Cubic
a=8.083A
2130 3.6 7.5-8 7.45 /

CZ

??2" ??2"X0.5mm
10X10X0.5mm
GGG Cubic
a=12.37A
1860 7.05 6-7 / /

CZ

??2" ??2"X0.5mm
10X10X0.5mm
TiO2 Quartet
a=4.593A
c=2.958A
1840 4.26 7 / / floating zone (FZ) ??23-25 10X10X0.5mm
10X5X0.5mm
GaN epitaxial thin film substrates
Crystal Crystal Structure Melt-ing Point (??) Density (g/cm3) Mohs hard. Expa-nsion coeffi-cient (X10-6/K)

Lattice Mismatch to GaN

Growth Tech. Size Max. Standard epitaxial substrate ( polish one side or two side)
Al2O3 Hexagonal
a=4.758A
c=12.99A
2040 3.97 9 7.50 / CZ ??180mm ??2"X0.33mm
??100X0.33mm
10X10X0.5mm
MgO Cubic
a=4.216A
2852 3.58 5.5-6 12.8 3%at<111> ori arc melting 50X50mm ??2"X0.5mm
10X10X0.5mm
LSAT Cubic
a=3.868A
1840 6.74 6.5 10 1%at<111> ori CZ ??2" ??2"X0.5mm
10X10X0.5mm
LiAlO2 Tetragonal
a=5.17A
c=6.26A
1900 2.62 7.5 / 1.4%at <10 0> ori CZ ??2" ??2"X0.5mm
10X10X0.5mm
MgAl2O4 Cubic
a=8.083A
2130 3.6 7.5-8 7.45 9%at<111> ori CZ ??2" ??2"X0.5mm
10X10X0.5mm
SiC Hexagonal
a=3.080A
c=15.12A
2700 3.217 9.2 10.3 3%at <000 1 > ori CVD ??2" 10X10X0.3mm
ZnO Hexagonal
a=3.325A
c=5.213A
1975 5.605 4.5 2.90 2.2%at <0001> ori Hydro-thermal ??25.4mm 20X20X0.5mm
LiGaO2 Tetragonal
a=5.406A
a=5.012A
c=6.379A
1600 4.18 8 / 0.2%at<001 > ori

CZ

??20mm 10X10X0.5mm
Semiconductor substrates
Crystal Crystal Structure Melting Point (??) Density (g/cm3) Conductive type Doped Resistivity
??.cm
Growth Tech. Size Max. Standard epitaxial substrate ( polish one side or two side)
Si Cubic
a=5.0430
1415 2.33 Intrinsic Undoped 102-104 CZ ??8" ??2"X0.5
??3"X0.5
??4"X0.5
N P 0.001-40
P B 0.001-40
Ge Cubic
a=5.6575
937.4 5.765 Intrinsic Undoped >35 CZ ??4" ??2"X0.5
??3"X0.5
??4"X0.5
N Sb 0.05-35
P Ga 0.05-35
III-V Semiconductor substrate
Crystal Crystal Structure Melt-ing Point (??) Density (g/cm3) Doped Conductive type Carrier concen-tration
CM -3
Dislo-cation density
CM-2
Growth Tech. Size Max. Standard epitaxial substrate ( polish one side or two side)
GaP Cubic 1480 4.13 umdoped N 2-8X1017 <105
LEC ??50 ??2"X0.5
S N 2-6X1016
GaAs Cubic
a=5.653
1238 5.13 None Si / <5X105 LEC or HB ??3" ??2"X0.5
??3"X0.5
Si N >5X1017
Cr Si /
Te N -2X1018
Zn P >5X1018
InP Cubic a=5.243 1062 6.719 None N 1-2X1016 <5X104 LEC ??2" ??2"X0.5
Sn N 1-3X1018
S N 1-4X1018
Fe Si /
Zn P 6-4X1018

 

 

 

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