Aluminum Nitride Nanometer Powder

Purity---
99％ Oxygen content --- <0.8wt％ Dissociative Si％ 0.2

Shape---

Dimension---
Average particle size (D50) --- <50nm，Specific surface area --- >78m2/g

Property---
Color --- offwhite Crystallographic phase --- Hexagonal
Apparent density --- 0.12g/cm3
Manufacture method --- Plasma arc vapor

Application---
Nano Aluminum nitride primary used in integrate circuit subtract, electronic devices, optical devices, thermal emission devices,crucibles used at high temperatures,preparation of composites of metal matrixes and polymer matrixes,expecially,in the high temperature seal binders and electronic encapsulation materials,Nano-ALN will be substantially applied in future. Store --- It should be storing the cool and dry rooms without solar light 。 The product cannot be in big compression 。 In the use process of Nano-ALN powders, in order to avoid the powder aggregating caused by absorbing moistness and thus affecting application effects,the Nano-ALN powder can be not exposed in air.

Aluminium nitride (AlN) is a nitride of aluminium. Its wurtzite phase (w-AlN) is a wide band gap (6.01-6.05 eV at room temperature) semiconductor material, giving it potential application for deep ultraviolet optoelectronics.

AlN was first synthesized in 1877, but it was not until the middle of the 1980s that its potential for application in microelectronics was realized due to its relative high thermal conductivity for an electrical insulating ceramic (70–210 W·m−1·K−1 for polycrystalline material, and as high as 285 W·m−1·K−1 for single crystals).

Aluminium nitride is stable at high temperatures in inert atmospheres and melts at 2800 °C. In a vacuum, AlN decomposes at ~1800 °C. In the air, surface oxidation occurs above 700 °C, and even at room temperature, surface oxide layers of 5-10 nm have been detected. This oxide layer protects the material up to 1370 °C. Above this temperature bulk oxidation occurs. Aluminium nitride is stable in hydrogen and carbon dioxide atmospheres up to 980 °C.

The material dissolves slowly in mineral acids through grain boundary attack, and in strong alkalies through attack on the aluminium nitride grains. The material hydrolyzes slowly in water. Aluminium nitride is resistant to attack from most molten salts, including chlorides and cryolite.

AlN is synthesized by the carbothermal reduction of aluminium oxide or by direct nitridation of aluminium. The use of sintering aids, such as Y2O3 or CaO, and hot pressing is required to produce a dense technical grade material.

Basic Infomation

CAS Registry Number:24304-00-5 Yes

ChEBI:CHEBI:50884 Yes

ChemSpider:81668 Yes

EC number:246-140-8

Chemical formula:AlN

Molar mass:0.9882 g/mol

Appearance:white to pale-yellow solid

Density: 3.260 g/cm3

Melting point: 2,200 °C (3,990 °F; 2,470 K)

Boiling point: 2,517 °C (4,563 °F; 2,790 K) decomposes

Solubility in water:reacts (powder), insoluble (monocrystalline)

Solubility: reacts in ethanol

Band gap: 6.015 eV [2] (direct)

Electron mobility: ~300 cm2/(V·s)

Thermal conductivity: 285 W/(m·K)

Refractive index (nD):1.9–2.2

Structure Crystal structure:Wurtzite

Space group:C6v4-P63mc

Coordination geometry:Tetrahedral

Specific heat capacity (C):30.1 J/mol K

Std molar entropy (So298):20.2 J/mol K

Std enthalpy of formation (ΔfHo298):318 kJ/mol

Gibbs free energy (ΔfG˚):287.4 kJ/mol