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High-temperature superconductor thin-film substrates

Crystal	Crystal Structure	Melting point (??)	Density (g/cm³)	Expansion coefficient (X10^-6/K)	Permittivity	Growth Tech.	Size Max.	Standard epitaxial substrate ( polish one side or two side)
LaAlO₃	Oblique Hexahedral (about cubic ) a=3.821A	2100	6.52	9.2	24.5	CZ	??3"	??3"X0.5mm ??2"X0.5mm 10X10X0.5mm
LSAT	Cubic a=3.868A	1840	6.74	10	22	CZ	??2"	??2"X0.5mm 10X10X0.5mm
SrTiO₃	Cubic a=3.90A	2050	5.175	10.4	300	flame fusion	??30mm	10X10X 0.5mm 10X5X 0.5mm
MgO	Cubic a=4.216A	2852	3.58	12.8	9.8	arc melting	50X 50X20	??2"X0.5mm 10X10X 0.5mm
YSZ	Cubic c=5.125A	2500	5.8	10.3	27	Flux Technique	??2"	??2"X0.5mm 10X10X 0.5mm
NdGaO₃	Orthogonal a=5.43A b=5.5A c=7.71A	1600	7.57	7.8	25	CZ	??2"	??2"X0.5mm 10X10X 0.5mm
La:SrAlO3	Quartet a=3.756A c=12.63A	1650	5.92	<100> 10.05 <001> 18.9	16.8	CZ	??20mm	10X10X 0.5mm
YAlO3	Orthogonal a=5.3286A b=7.3706A c=5.1796A	1870	5.37	4.2 //a 11.7 //b 5.1//c	/	CZ	??2"	10X10X 0.5mm

Magnetic and ferroelectric thin film substrates

Crystal	Crystal Structure	Melting Point (??)	Density (g/cm³⁾	Mohs hardness	Expansion coefficient (X10^-6/K)	Permi-ttivity	Growth Tech.	Size Max.	Standard epitaxial substrate ( polish one side or two side)
LaAlO₃	Rhombo- hedral (about Cubic) a=3.821A	2100	6.52	6.5	9.2	24.5	CZ	??3"	??3"X0.5mm ??2"X0.5mm ??1"X0.5mm 10X10X0.5mm
LSAT	Cubic a=3.868A	1840	6.74	6.5	10	22	CZ	??2"	??2"X0.5mm 10X10X0.5mm
SrTiO₃	Cubic a=3.90A	2050	5.175	6	10.4	300	flame fusion	??30mm	10X10X0.5mm 10X5X0.5mm
Nb:SrTiO₃	Cubic a=3.90A	2050	5.175	6	/	/	flame fusion	??25mm	10X10X0.5mm 10X5X0.5mm
Al₂O₃	Hexagonal a=4.758A c=12.99A	2040	3.97	9	7.50	/	CZ	??180mm	??2"X0.33mm ??100X0.33mm 10X10X0.5mm
MgAl₂O₄	Cubic a=8.083A	2130	3.6	7.5-8	7.45	/	CZ	??2"	??2"X0.5mm 10X10X0.5mm
GGG	Cubic a=12.37A	1860	7.05	6-7	/	/	CZ	??2"	??2"X0.5mm 10X10X0.5mm
TiO₂	Quartet a=4.593A c=2.958A	1840	4.26	7	/	/	floating zone (FZ)	??23-25	10X10X0.5mm 10X5X0.5mm

GaN epitaxial thin film substrates

Crystal	Crystal Structure	Melt-ing Point (??)	Density (g/cm³)	Mohs hard.	Expa-nsion coeffi-cient (X10^-6/K)	Lattice Mismatch to GaN	Growth Tech.	Size Max.	Standard epitaxial substrate ( polish one side or two side)
Al₂O₃	Hexagonal a=4.758A c=12.99A	2040	3.97	9	7.50	/	CZ	??180mm	??2"X0.33mm ??100X0.33mm 10X10X0.5mm
MgO	Cubic a=4.216A	2852	3.58	5.5-6	12.8	3%at<111> ori	arc melting	50X50mm	??2"X0.5mm 10X10X0.5mm
LSAT	Cubic a=3.868A	1840	6.74	6.5	10	1%at<111> ori	CZ	??2"	??2"X0.5mm 10X10X0.5mm
LiAlO₂	Tetragonal a=5.17A c=6.26A	1900	2.62	7.5	/	1.4%at <10 0> ori	CZ	??2"	??2"X0.5mm 10X10X0.5mm
MgAl₂O₄	Cubic a=8.083A	2130	3.6	7.5-8	7.45	9%at<111> ori	CZ	??2"	??2"X0.5mm 10X10X0.5mm
SiC	Hexagonal a=3.080A c=15.12A	2700	3.217	9.2	10.3	3%at <000 1 > ori	CVD	??2"	10X10X0.3mm
ZnO	Hexagonal a=3.325A c=5.213A	1975	5.605	4.5	2.90	2.2%at <0001> ori	Hydro-thermal	??25.4mm	20X20X0.5mm
LiGaO2	Tetragonal a=5.406A a=5.012A c=6.379A	1600	4.18	8	/	0.2%at<001 > ori	CZ	??20mm	10X10X0.5mm

Semiconductor substrates

Crystal	Crystal Structure	Melting Point (??)	Density (g/cm³)	Conductive type	Doped	Resistivity ??.cm	Growth Tech.	Size Max.	Standard epitaxial substrate ( polish one side or two side)
Si	Cubic a=5.0430	1415	2.33	Intrinsic	Undoped	10²-10⁴	CZ	??8"	??2"X0.5 ??3"X0.5 ??4"X0.5
				N	P	0.001-40
				P	B	0.001-40
Ge	Cubic a=5.6575	937.4	5.765	Intrinsic	Undoped	>35	CZ	??4"	??2"X0.5 ??3"X0.5 ??4"X0.5
				N	Sb	0.05-35
				P	Ga	0.05-35

III-V Semiconductor substrate

Crystal	Crystal Structure	Melt-ing Point (??)	Density (g/cm³)	Doped	Conductive type	Carrier concen-tration CM ^-3	Dislo-cation density CM^-2	Growth Tech.	Size Max.	Standard epitaxial substrate ( polish one side or two side)
GaP	Cubic	1480	4.13	umdoped	N	2-8X10¹⁷	<10⁵	LEC	??50	??2"X0.5
				S	N	2-6X10¹⁶
GaAs	Cubic a=5.653	1238	5.13	None	Si	/	<5X10⁵	LEC or HB	??3"	??2"X0.5 ??3"X0.5
				Si	N	>5X10¹⁷
				Cr	Si	/
				Te	N	-2X10¹⁸
				Zn	P	>5X10¹⁸
InP	Cubic a=5.243	1062	6.719	None	N	1-2X10¹⁶	<5X10⁴	LEC	??2"	??2"X0.5
				Sn	N	1-3X10¹⁸
				S	N	1-4X10¹⁸
				Fe	Si	/
				Zn	P	6-4X10¹⁸