
Boron Nitride (BN) |
Hexagonal boron nitride is one kind of loose, lubricious and hygrometric white powder. Its theoretical density is 2.27/cm3, Mosh hardness is 2. Its mechanical strength is lower, but higher than the graphite’s . It has not the exact melting point , but sublimates at 3000 ℃ in 0.1Mpa nitrogen gas . The highest using temperature is 2800 ℃ in nitrogen or argon gas, but below 1000 ℃ in oxygen. It has lower thermal expansion coefficient and higher thermal conductive rate , so its heat-resisting shaking ability is fine . The loop time from 1200 ℃ to 20 ℃ is more than one hundred and the BN has not been destoried . Boron nitride belongs to hexagonal crystal system , its crystal structure is similar to graphite , so it is also called white graphite . B and N atom arrange to six-angle ring network alternately. The atoms in layer bond each other covalently and strongly, but the atoms between layers bond with molecular bond, so it is weak and ease to break. The atom space of B-N in each layer is 0.142nm, and the elastic modulus E is 910Gpa. But between layers it is 0.335nm and 30 Gpas respectively. Not only the structure of BN is consistent with graphite but also the lattice constant is similar. |
Boron Nitride (BN) Sputtering targets Purity --- 99.5% Density ---1.9~2.1g/cm3 Shape --- Discs, Plate, Step (Dia ≤360mm,, Thickness ≥1mm) Rectangle, Sheet, Step (Length ≤410mm, Width ≤300mm, Thickness ≥1mm) Application --- Boron Nitride (BN) Sputtering Target can be use in semiconductor, physical vapor deposition (PVD) display and optical applications. |
Boron Nitride (BN) Evaporation Material Shape --- Irregularly Piece Size --- 1-10mm Application --- Boron Nitride (BN) can be use in semiconductor, physical vapor deposition (PVD) display and optical applications. |
Boron Nitride (BN) Boat Purity --- 99.5% Size --- |
Boron Nitride (BN) Crucible Purity --- 99.5% Dia< 480mm height < 100mm |
Boron Nitride Products - Tube / Ring / insulates / fixtures / blanks / supports Size --- Dia< 480mm , height < 100mm Shape --- By drawing Application --- Tube / Ring / insulates / fixtures / supports / blanks / other components |
Boron Nitride (BN) Powder Shape --- Powder Application --- structure material of atom reactor, spout of plane and rocket, lube of high temperature, compound cube boron nitride |
Key Properties of Boron Nitride - High thermal conductivity - Low thermal expansion - Good thermal shock resistance - High electrical resistance - Low dielectric constant and loss tangent - Microwave transparency - Non toxic - Easily machined — non abrasive and lubricious - Chemically inert - Not wet by most molten metals Typical Application of Boron Nitride - Electronic parts — heat sinks, substrates, coil forms, prototypes - Boron doping wafers in silicon semiconductor processing - Vacuum melting crucibles - CVD crucibles - Microcircuit packaging - Sputtering targets - High precision sealing, brazing, and metallizing fixtures - Microwave tubes - Horizontal caster break rings - Low friction seals - Plasma arc insulators - High temperature furnace fixtures and supports - Various types of components for semiconductor manufacturing equipment |
Relation Products: Boron carbide sputtering target - B4C; Boron Nitride sputtering target - BN; Aluminium Diboride Sputtering target - AlB2; Cerium Hexaboride sputtering targets - CeB6; Chrominium Boride sputtering targets - CrB; Cobalt Boride sputtering target - CoB; Hafnium Diboride (HfB2) Sputtering Target - HfB2; Iron Boride sputtering targets - FeB; Lathanum Hexaboride sputtering targets - LaB6; Magnesium Diboride sputtering targets - MgB2; Molybdenum Diboride sputtering targets - MoB2; Neodymium Boride (NdB) Sputtering Target; Nickel Boride sputtering targets -Ni2B; Tantalum Diboride Sputterng target - TaB2; Titanium Aluminum Boron Sputtering Targets - TiAlB; Titanium Diboride sputtering targets - TiB2; Tungsten Diboride Sputtering tarets - WB2; Vanadium Boride (VB2) Sputtering Target - VB / VB2; Zirconium Diboride Sputtering targets - ZrB2; Aluminum Nitride (AlN) Sputtering Targets; Boron Nitride (BN) Sputtering Targets; Chrominium Nitride (CrN) Sputtering Targets; Gallium Nitride (GaN) Sputtering Targets; Germanium Nitride (Ge3N4) Sputtering targets; Hafnium Nitride (HfN) Sputtering Targets; Magnesium Nitride (Mg2N3) Sputtering Targets; Niobium Niride (NbN) Sputtering Targets; Silicom Nitride (Si3N4) Sputtering Targets; Tantalum Nitride (TaN) Sputtering Targets; Titanium Nitride(TiN) Sputtering Targets; Vanadium Nitride (VN) Sputtering Targets; Zirconium Nitride (ZrN) Sputtering Targets;
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